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NB MEMORY 4GB PC12800 DDR3/SO KVR16LS11/4 KINGSTON

NB MEMORY 4GB PC12800 DDR3/SO KVR16LS11/4 KINGSTON

52,85 €

Kingston Technology ValueRAM . Component for: Laptop, Internal memory: 4 GB, Memory layout (modules x size): 1 x 4 GB, Internal memory type: DDR3L, Memory form factor: 204-pin SO-DIMM, CAS latency: 11

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Εξαντλημένο

Κωδικός προϊόντος: 1151797 Κατηγορία: Μάρκα:

Kingston Technology is the world's independent memory leader and is well-known for providing high quality memory products at an attractive price. Kingston ValueRAM is your best source for industry-standard memory to maximise the performance and productivity of your system. Built with A-grade components only, Kingston ValueRAM memory modules come with a lifetime warranty.

  • JEDEC standard 1.35V and 1.5V Power Supply
  • VDDQ = 1.35V and 1.5V
  • 800MT/s fCK for 1600Mb/sec/pin
  • 8 independent internal bank
  • Programmable CAS Latency: 11, 10, 9, 8, 7, 6, 5
  • Programmable Additive Latency: 0, CL – 2, or CL – 1 clock
  • 8-bit pre-fetch
  • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
  • Bi-directional Differential Data Strobe
  • Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
  • On Die Termination using ODT pin
  • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE ≤ 95°C
  • Asynchronous Reset
  • PCB: Height1.18” (30mm), double sided component
  • Lead Free RoHS Compliant
Vendor Homepage

https://www.kingston.com/en
Category Code

MEB
Unit Box Height

0.045
Unit Box Length

0.08
Unit Box Width

0.01
Buffered memory type

Unregistered (unbuffered)
CAS latency

11
Component for

Laptop
Country of origin

Taiwan
ECC

No
Internal memory

4 GB GB, 4096 MB MB
Internal memory type

DDR3L
Lead plating

Gold
Memory bus

64 bit bit
Memory data transfer rate

1600 MT/s MT/s
Memory form factor

204-pin SO-DIMM
Memory layout (modules x size)

1 x 4 GB GB
Memory voltage

1.35,1.5 V V
Module configuration

512M X 64
Refresh row cycle time

260 ns ns
Row active time

35 ns ns
Row cycle time

48.125 ns ns
Operating temperature (T-T)

0 – 85 °C °C
Storage temperature (T-T)

-55 – 100 °C °C
Height

30 mm mm
Width

67.6 mm mm
Harmonized System (HS) code

84733020
Bus clock rate

1600 MHz MHz
Chips organisation

X8
Error indication

No
Memory layout

1 x 4096 MB MB
Units per Shipping Box

1
Unit Calculated Volume

3.6E-05 cubm
Unit Calculated Weight

0.014 kg

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